2D ferroelectrics and ferroelectrics with 2D: materials and device prospects

TL;DR

This paper explores the intersection of 2D semiconductors and ferroelectric materials, highlighting their combined potential for advanced electronic devices and discussing current challenges in material synthesis and characterization.

Contribution

It provides a comprehensive overview of the integration of 2D materials with ferroelectricity, emphasizing new opportunities for device applications and identifying key challenges for future research.

Findings

2D ferroelectrics enable ultra-thin, scalable memory devices

Integration of 2D materials with ferroelectricity enhances device functionalities

Challenges include material synthesis and reliable characterization

Abstract

Ferroelectric and two-dimensional materials are both heavily investigated classes of electronic materials. This is unsurprising since they both have superlative fundamental properties and high-value applications in computing, sensing etc. In this Perspective, we investigate the research topics where 2D semiconductors and ferroelectric materials both in 2D or 3D form come together. 2D semiconductors have unique attributes due to their van der Waals nature that permits their facile integration with any other electronic or optical materials. In addition, the emergence of ferroelectricity in 2D monolayers, multilayers, and artificial structures offers further advantages since traditionally ferroelectricity has been difficult to achieve in extremely thickness scaled materials. In this perspective, we elaborate on the applications of 2D materials + ferroelectricity in non-volatile memory devices highlighting their potential for in-memory computing, neuromorphic computing, optoelectronics, and spintronics. We also suggest the challenges posed by both ferroelectrics and 2D materials, including material/device preparation, and reliable characterizations to drive further investigations at the interface of these important classes of electronic materials.