Memristive switching in the surface of a charge-density-wave topological semimetal

TL;DR

This paper reports memristive switching in a topological semimetal due to ferroelectric surface states, enabling non-volatile control of quantum states and potential applications in low-dissipation electronics.

Contribution

It demonstrates ferroelectricity on the surface of a topological semimetal and constructs a prototype ferroelectric memristor with high on/off ratio and endurance.

Findings

Memristive switching observed in (TaSe4)2I surface state.

Ferroelectric surface polarization due to surface reconstruction.

Prototype memristor with on/off ratio of 10^3 and endurance over 10^3 cycles.

Abstract

Owing to the outstanding properties provided by nontrivial band topology, topological phases of matter are considered as a promising platform towards low-dissipation electronics, efficient spin-charge conversion, and topological quantum computation. Achieving ferroelectricity in topological materials enables the non-volatile control of the quantum states, which could greatly facilitate topological electronic research. However, ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free carriers. In this study, we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal (TaSe4)2I. We find that the surface state of (TaSe4)2I presents out-of-plane ferroelectric polarization due to surface reconstruction. With the combination of ferroelectric surface and charge-density-wave-gapped bulk states, an electric switchable barrier height can be achieved in (TaSe4)2I-metal contact. By employing a multi-terminal grounding design, we manage to construct a prototype ferroelectric memristor based on (TaSe4)2I with on/off ratio up to 10^3, endurance over 10^3 cycles, and good retention characteristics. The origin of the ferroelectric surface state is further investigated by first-principles calculations, which reveals an interplay between ferroelectricity and band topology. The emergence of ferroelectricity in (TaSe4)2I not only demonstrates it as a rare but essential case of ferroelectric topological materials, but also opens new routes towards the implementation of topological materials in functional electronic devices.