Atomically thin obstructed atomic insulators with robust edge modes and quantized spin Hall effect

TL;DR

This paper demonstrates that certain atomically thin materials like phosphorene and group-Va monolayers host robust edge states and can transition to quantum spin Hall phases, promising for spintronic applications.

Contribution

It identifies and analyzes obstructed atomic insulator states with robust edge modes in phosphorene and group-Va monolayers, revealing their potential for topological and spintronic devices.

Findings

Presence of robust edge states in phosphorene and group-Va monolayers.

Transition to quantum spin Hall phase under strain or doping.

Large Rashba spin splitting in arsenene.

Abstract

Symmetry-protected edge states serve as direct evidence of nontrivial electronic topology in atomically thin materials. Finding these states in experimentally realizable single-phase materials presents a substantial challenge for their use in fundamental studies and developing functional nanoscale devices. Here, we show the presence of robust edge states in phosphorene and group-Va monolayers with puckered lattice structures. By carefully analyzing the symmetry of the atomic sites and edge mode properties, we demonstrate that these atomically thin monolayers realize recently introduced obstructed atomic insulator states with partially occupied edge modes. The obstructed edge modes attain a Rashba-type spin splitting with Rashba parameter ($\alpha$) of 1.52 eV \r{A} for arsenene. Under strain or doping effects, these obstructed insulators transition to a phase with substantial spin-Berry curvature, yielding a double quantum spin Hall state with a spin Hall conductivity $\approx 4 \frac{e^2}{h}$. The experimental availability of phosphorene and other group-Va monolayers could enable verification of obstructed atomic states and enhanced spin-Berry curvature effects discussed in this study, offering the potential for applications in topological electronic and spintronic devices.