Dielectric Properties of Disordered A6B2O17 (A = Zr; B = Nb, Ta) Phases

TL;DR

This study investigates the structure and dielectric properties of disordered A6B2O17 phases with A = Zr and B = Nb, Ta, revealing high permittivity and low loss in thin films and ceramics, suitable for electronic applications.

Contribution

It provides new insights into the dielectric behavior of disordered A6B2O17 phases, including synthesis methods and detailed property characterization.

Findings

Relative permittivities approaching 60 observed.

Loss tangents less than 10^-2 across a broad frequency range.

Potential for use in oxide electroceramic applications.

Abstract

We report on the structure and dielectric properties of ternary A6B2O17 (A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter deposition from dense, phase-homogenous bulk ceramic targets, which are synthesized through a reactive sintering process at 1500 {\deg}C. Crystal structure, microstructure, chemistry and dielectric properties are characterized by X-ray diffraction and reflectivity, atomic force microscopy, X-ray photoelectron spectroscopy, and capacitance analysis respectively. We observe relative permittivities approaching 60 and loss tangents < 10^-2 across the 10^3-10^5 Hz frequency range in the Zr6Nb2O17 and Zr6Ta2O17 phases. These observations create an opportunity space for this novel class of disordered oxide electroceramics.