Room temperature Si:S barrier infrared detector with broadband response up to 4.4{\mu}m
He Zhu, Yunlong Xiao, Zhongyang Yu, Jiaqi Zhu, Qing Li, Zhenyu Ye, Xi, Wang, Changlong Liu, Changyu Pan, Yufeng Shan, Junli Duan, Huizhen Wu, Weida, Hu, Ning Dai

TL;DR
This paper introduces a room-temperature silicon sulfur barrier infrared detector with broadband response up to 4.4 micrometers, achieving high efficiency and low cost, suitable for large-scale production.
Contribution
The work presents a novel silicon sulfur barrier detector design that significantly improves mid-infrared detection performance at room temperature using standard silicon fabrication processes.
Findings
Response range from 1.12 to 4.4 μm with peak at 3.3 μm
Quantum efficiency exceeds previous silicon-based detectors by an order of magnitude
Detectivity at 90K reaches 1.4×10^11 Jones
Abstract
Mid-infrared spectrum is a critical tool for chemical analysis, industrial inspection, environment, and other fields due to its rich chemical bond information. However, the complicated growth or fabrication procedures of existing mid-infrared sensitive materials hinder the large-scale production and utilization of mid-infrared detectors. To address this issue, we developed Si:S barrier detectors employing sulfur doped silicon and a sophisticated band barrier design. Since the transport of dark current and photo current is separated, the barrier design effectively suppresses the dark current while allowing the photo current to leverage gain mechanisms, thereby substantially improving signal-to-noise ratio. As a result, the detector exhibits an infrared response range covering from 1.12 to 4.4{\mu}m with a peak at 3.3{\mu}m, excluding its intrinsic response in visible range. Its peak…
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Taxonomy
TopicsAdvanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Photonic and Optical Devices
