A quantum dot in germanium proximitized by a superconductor
Lazar Lakic, William I. L. Lawrie, David van Driel, Lucas E. A. Stehouwer, Yao Su, Menno Veldhorst, Giordano Scappucci, Ferdinand Kuemmeth, Anasua Chatterjee

TL;DR
This paper demonstrates a tunable germanium quantum dot proximitized by a superconductor, enabling control over its quantum states and revealing rich sub-gap physics, advancing the development of hybrid quantum devices.
Contribution
It introduces a germanium quantum dot with controllable superconductor coupling, ground state parity, and sub-gap phenomena, a novel platform for quantum information processing.
Findings
Tunable QD-SC coupling and gate control of the induced gap.
Control of the system's ground state parity between even and odd.
Observation of rich sub-gap spin splitting spectra.
Abstract
Planar germanium quantum wells have recently been shown to host hard-gapped superconductivity. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear spin-free material expected to yield long coherence times. Therefore, as one of the few group IV materials with the potential to host superconductor-semiconductor hybrid devices, proximitized quantum dots in germanium is a compelling platform to achieve and combine topological superconductivity with existing and novel qubit modalities. Here we demonstrate a quantum dot (QD) in a Ge/SiGe heterostructure proximitized by a platinum germanosilicide (PtGeSi) superconducting lead (SC), forming a SC-QD-SC junction. We show tunability of the QD-SC coupling strength, as well as gate control of the ratio of charging energy and the induced gap. We further exploit…
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