Hysteresis and Self-Oscillations in an Artificial Memristive Quantum Neuron

TL;DR

This paper explores a quantum memristor-based artificial neuron that exhibits hysteresis and self-oscillations, revealing quantum-specific behaviors useful for neuromorphic computing.

Contribution

It introduces a theoretical model demonstrating hysteresis and self-oscillations in a quantum memristor neuron, highlighting quantum regime conditions for these phenomena.

Findings

Hysteretic current-voltage behavior in quantum memristor

Self-sustained oscillations occur only in quantum regime

Oscillations depend on circuit parameters and decoherence levels

Abstract

We theoretically study an artificial neuron circuit containing a quantum memristor in the presence of relaxation and dephasing. The charge transport in the quantum element is realized via tunneling of a charge through a quantum particle which shuttles between two terminals -- a functionality reminiscent of classical diffusive memristors. We demonstrate that this physical principle enables hysteretic behavior of the current-voltage characteristics of the quantum device. In addition, being used in artificial neural circuit, the quantum switcher is able to generate self-sustained current oscillations. Our analysis reveals that these self-oscillations are triggered only in quantum regime with a moderate rate of relaxation, and cannot exist either in a purely coherent regime or at a very high decoherence. We investigate the hysteresis and instability leading to the onset of current self-oscillations and analyze their properties depending on the circuit parameters. Our results provide a generic approach to the use of quantum regimes for controlling hysteresis and generating self-oscillations.