Thermal stability and phase transformation of $\alpha$-, $\kappa(\epsilon)$-, and $\gamma$-Ga$_2$O$_3$ thin films to $\beta$-Ga$_2$O$_3$ under various ambient conditions
J. Tang, K. Jiang, P. Tseng, R. C. Kurchin, L. M. Porter, R. F., Davis

TL;DR
This study systematically investigates the thermal stability and phase transformation of various Ga₂O₃ thin films to the stable β-phase under different ambient conditions using in-situ X-ray diffraction and microscopy.
Contribution
It provides detailed insights into the temperature ranges, crystallographic relationships, and damage mechanisms involved in phase transitions of Ga₂O₃ polymorphs during annealing.
Findings
α-Ga₂O₃ transforms at 471-525°C causing surface damage
κ(ε)- and γ-Ga₂O₃ convert with minimal volume change
Specific orientation relationships are identified before and after phase transitions
Abstract
Phase transitions in metastable -, -, and -GaO films to thermodynamically stable -GaO during annealing in air, N, and vacuum have been systematically investigated via in-situ high-temperature X-ray diffraction and scanning electron microscopy. These respective polymorphs exhibited thermal stability to around 471-525C, 773-825C, and 490-575C before transforming into -GaO, across all tested ambient conditions. Particular crystallographic orientation relationships were observed before and after the phase transitions, i.e., (0006) -GaO -GaO, (004) -GaO (310) and -GaO, and (400) -GaO (400) -GaO. The phase transition of…
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Taxonomy
TopicsGa2O3 and related materials · Advanced Photocatalysis Techniques · Electronic and Structural Properties of Oxides
