Deposition of highly-crystalline AlScN thin films using synchronized HiPIMS -- from combinatorial screening to piezoelectric devices

TL;DR

This paper demonstrates a novel ionized physical vapor deposition method using synchronized HiPIMS to produce highly-crystalline, textured AlScN thin films at lower temperatures, suitable for advanced RF MEMS devices.

Contribution

It introduces a synchronized HiPIMS technique for depositing high-quality AlScN films with controlled stress and texture, overcoming previous temperature and defect limitations.

Findings

Achieved highly oriented AlScN films with minimal defects.

Successfully removed disoriented grains via substrate biasing.

Demonstrated conformal c-axis textured AlScN on structured wafers.

Abstract

Fueled by the 5G revolution, the demand for advanced radio frequency micro-electromechanical systems (MEMS) based on AlScN is growing rapidly. However, synthesizing high-quality, textured AlScN thin films is challenging. Current approaches typically rely on high temperatures and expensive compound targets. In this study, we demonstrate the feasibility of ionized physical vapor deposition to deposit highly oriented AlScN films with minimal defects at lower temperatures. Using metal-ion synchronized high-power impulse magnetron co-sputtering (MIS-HiPIMS) we can selectively bombard the growing film with Al and/or Sc ions to enhance the adatom mobility while simultaneously providing the ability to tune stress and coat complex structures conformally. We find that the Sc solubility in wurtzite AlN is slightly reduced, whereas crystallinity and texture are markedly improved. Disoriented grains, a key challenge in growing AlScN films, are completely removed via substrate biasing, while the residual stress can be tailored by adjusting the same. The measured piezoelectric response of the films is in line with DFT predictions and on par with the current state of the art. Finally, we demonstrate conformal deposition of c-axis textured AlScN on structured Si wafers underlining the promise of ionized PVD for the fabrication of advanced RF filters and next-generation MEMS devices.