Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams

TL;DR

This paper introduces a focused carbon ion beam technique to precisely create and activate quantum emitters in high-purity silicon, advancing nanoscale quantum device engineering.

Contribution

It develops a focused carbon ion beam source and a multi-step implantation protocol for programmable activation of quantum emitters in silicon.

Findings

Successful creation of W and G quantum emitters in silicon

Enhanced yield of single G centers in high-quality silicon wafers

Demonstration of sub-100 nm resolution activation

Abstract

Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creation of two types of quantum emitters in silicon, the W and G centers. Furthermore, we apply a multi-step implantation protocol for the programmable activation of the G centers with sub-100- nm resolution. This approach provides a route for significant enhancement of the creation yield of single G centers in carbon-free silicon wafers. Our experimental demonstration is an important step towards nanoscale engineering of telecom quantum emitters in silicon of high crystalline quality and isotope purity.