Connecting physics to systems with modular spin-circuits

TL;DR

This paper introduces physics-based, experimentally validated modular circuit models for CMOS + spintronic systems, enabling accurate system-level analysis of complex quantum phenomena involving spin and magnetism.

Contribution

It develops a general spin-circuit framework derived from quantum transport density matrices, bridging physics and circuit modeling for spintronic materials.

Findings

Validated models with experimental benchmarks

Step-by-step examples demonstrating the approach

Potential extension to other quantum degrees of freedom

Abstract

An emerging paradigm in modern electronics is that of CMOS + $\sf X$ requiring the integration of standard CMOS technology with novel materials and technologies denoted by $\sf X$. In this context, a crucial challenge is to develop accurate circuit models for $\sf X$ that are compatible with standard models for CMOS-based circuits and systems. In this perspective, we present physics-based, experimentally benchmarked modular circuit models that can be used to evaluate a class of CMOS + $\sf X$ systems, where $\sf X$ denotes magnetic and spintronic materials and phenomena. This class of materials is particularly challenging because they go beyond conventional charge-based phenomena and involve the spin degree of freedom which involves non-trivial quantum effects. Starting from density matrices $-$ the central quantity in quantum transport $-$ using well-defined approximations, it is possible to obtain spin-circuits that generalize ordinary circuit theory to 4-component currents and voltages (1 for charge and 3 for spin). With step-by-step examples that progressively become more complex, we illustrate how the spin-circuit approach can be used to start from the physics of magnetism and spintronics to enable accurate system-level evaluations. We believe the core approach can be extended to include other quantum degrees of freedom like valley and pseudospins starting from corresponding density matrices.