Strong Damping-Like Torques in Wafer-Scale MoTe${}_2$ Grown by MOCVD

TL;DR

This paper reports on the scalable wafer-scale growth of 1T' MoTe2 using MOCVD, demonstrating strong spin-orbit coupling and damping-like torques suitable for spintronics applications.

Contribution

The study introduces a BEOL-compatible MOCVD process for uniform 1T' MoTe2 growth with demonstrated strong spin-orbit coupling and torque effects.

Findings

Uniform wafer-scale 1T' MoTe2 films achieved

Significant damping-like torque observed in measurements

High spin-charge conversion efficiency demonstrated

Abstract

The scalable synthesis of strong spin orbit coupling (SOC) materials such as 1T${}^\prime$ phase MoTe${}_2$ is crucial for spintronics development. Here, we demonstrate wafer-scale growth of 1T${}^\prime$ MoTe${}_2$ using metal-organic chemical vapor deposition (MOCVD) with sputtered Mo and (C${}_4$H${}_9$)${}_2$Te. The synthesized films show uniform coverage across the entire sample surface. By adjusting the growth parameters, a synthesis process capable of producing 1T${}^\prime$ and 2H MoTe${}_2$ mixed phase films was achieved. Notably, the developed process is compatible with back-end-of-line (BEOL) applications. The strong spin-orbit coupling of the grown 1T${}^\prime$ MoTe${}_2$ films was demonstrated through spin torque ferromagnetic resonance (ST-FMR) measurements conducted on a 1T${}^\prime$ MoTe${}_2$/permalloy bilayer RF waveguide. These measurements revealed a significant damping-like torque in the wafer-scale 1T${}^\prime$ MoTe${}_2$ film and indicated high spin-charge conversion efficiency. The BEOL compatible process and potent spin orbit torque demonstrate promise in advanced device applications.