Towards edge engineering of two-dimensional layered transition-metal dichalcogenides by chemical vapor deposition

TL;DR

This paper reviews recent advances in using chemical vapor deposition to engineer the edges of two-dimensional transition-metal dichalcogenides, enabling new functionalities and applications in electronics, catalysis, and quantum technologies.

Contribution

It provides a comprehensive overview of current CVD techniques for TMD edge engineering and discusses the potential for scalable edge functionalization.

Findings

CVD enables atomic edge configuration control in TMDs.

Diverse edge morphologies can be synthesized, such as nanoribbons and spirals.

Edge-rich TMD structures exhibit unique physical and chemical properties.

Abstract

The manipulation of edge configurations and structures in atomically thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T'-zigzag or armchair edges), as well as diverse edge morphologies (1D nanoribbons, 2D dendrites, 3D spirals, etc). These rich-edge TMD layers offer versatile candidates for probing the physical and chemical properties, and exploring new applications in electronics, optoelectronics, catalysis, sensing and quantum field. In this review, we present an overview of the current state-of-the-art in the manipulation of TMD atomic edges and edge-rich structures using CVD. We highlight the vast range of unique properties associated with these edge configurations and structures and provide insights into the opportunities afforded by such edge-functionalized crystals. The objective of this review is to motivate further research and development efforts in using CVD as a scalable approach to harness the benefits of such crystal-edge engineering.