Anisotropic magnetoresistance in altermagnetic MnTe

TL;DR

This paper investigates how the magnetic order in altermagnetic MnTe influences anisotropic magnetoresistance, revealing the relationship between magnetic orientation and electrical resistivity through experimental and symmetry analysis.

Contribution

It provides the first detailed analysis of anisotropic magnetoresistance components in MnTe as a function of magnetic order orientation within the basal plane.

Findings

Anisotropic magnetoresistance depends on the relative orientation of current and magnetic order.

Experimental results agree with symmetry analysis predictions.

Magnetic field manipulation alters resistivity linked to magnetic and crystal symmetry.

Abstract

Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order.