Does carrier localization affect the anomalous Hall effect?
Prasanta Chowdhury, Mohamad Numan, Shuvankar Gupta, Souvik Chatterjee,, Saurav Giri, Subham Majumdar

TL;DR
This study investigates how carrier localization influences the anomalous Hall effect in a chiral magnetic compound, finding localization affects ordinary Hall measurements but not the anomalous Hall response, possibly due to high carrier density.
Contribution
It provides detailed transport measurements on Co$_7$Zn$_7$Mn$_6$, revealing the absence of localization effects in the anomalous Hall effect despite their presence in the ordinary Hall coefficient.
Findings
Localization affects the ordinary Hall coefficient.
No localization signature in anomalous Hall resistivity.
High carrier density may suppress localization effects in anomalous Hall response.
Abstract
The effect of carrier localization due to electron-electron interaction in anomalous Hall effect is elusive and there are contradictory results in the literature. To address the issue, we report here the detailed transport study including the Hall measurements on -Mn type cubic compound CoZnMn with chiral crystal structure, which lacks global mirror symmetry. The alloy orders magnetically below = 204 K, and reported to show spin glass state at low temperature. The longitudinal resistivity () shows a pronounced upturn below = 75 K, which is found to be associated with carrier localization due to quantum interference effect. The upturn in shows a dependence and it is practically insensitive to the externally applied magnetic field, which indicate that electron-electron interaction is primarily responsible for the low-…
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