Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer

TL;DR

This study demonstrates that controlling an ultrathin amorphous interfacial layer via surface-activated bonding significantly reduces thermal boundary resistance at the GaN/diamond interface, enhancing heat dissipation in electronic devices.

Contribution

It introduces a precise method to control interfacial layer thickness and structure, achieving record low TBR in GaN/diamond interfaces through hybrid SiOx activation.

Findings

Achieved a TBR of 8.3 m2-K/GW with a 2.5 nm interfacial layer.

TBR increases sharply to 34 m2-K/GW when thickness doubles to 5.3 nm.

Theoretical analysis links TBR increase to interdiffusion and vibrational mismatch.

Abstract

Thermal boundary resistance (TBR) in semiconductor-on-diamond structure bottlenecks efficient heat dissipation in electronic devices. In this study, to reduce the TBR between GaN and diamond, surface-activated bonding with a hybrid SiOx-Ar ion source was applied to achieve an ultrathin interfacial layer. The simultaneous surface activation and slow deposition of the SiOx binder layer enabled precise control over layer thickness (2.5-5.3 nm) and formation of an amorphous heterogeneous nanostructure comprising a SiOx region between two inter-diffusion regions. Crucially, the 2.5-nm-thick interfacial layer achieved a TBR of 8.3 m2-W/GW, a record low for direct-bonded GaN/diamond interface. A remarkable feature is that the TBR is extremely sensitive to the interfacial thickness; rapidly increasing to 34 m2-K/GW on doubling the thickness to 5.3 nm. Theoretical analysis revealed the origin of this increase: a diamond/SiOx interdiffusion layer extend the vibrational frequency, far-exceeding that of crystalline diamond, which increases the lattice vibrational mismatch and suppresses phonon transmission.