Planar channeling of 855 MeV electrons in a boron-doped (110) diamond undulator -- a case study
H. Backe, W. Lauth, P. Klag, Thu Nhi Tran Caliste

TL;DR
This study investigates the feasibility of using a boron-doped diamond crystal as an undulator for 855 MeV electrons, combining experimental measurements with simulations, but does not observe the expected undulator peak.
Contribution
It presents the first experimental attempt to observe planar channeling radiation in a boron-doped diamond undulator guided by detailed simulations.
Findings
Optimal observation angle identified for maximum undulator peak
No undulator peak observed in experiments
Coherent scattering suppression observed in diamond
Abstract
A 4-period diamond undulator with a thickness of 20 m was produced with the method of Chemical Vapour Deposition (CVD), applying boron doping, on a straight diamond crystal with an effective thickness of 165.5 m. A planar (110) channeling experiment was performed with the 855 MeV electron beam of the Mainz Microtron MAMI accelerator facility to observe the expected undulator peak. The search was guided by simulation calculations on a personal computer. The code is based on the continuum potential picture, and a classical electrodynamic expression which involves explicitly the acceleration of the particle. As a result, an unexpected optimal observation angle was figured out, for which the undulator peak is strongest and the channeling radiation from the backing crystal being significantly suppressed. However, an undulator peak was not observed. Implications for the prepared…
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Taxonomy
TopicsDiamond and Carbon-based Materials Research · Medical Imaging Techniques and Applications · Advanced X-ray Imaging Techniques
