On-liquid-gallium surface synthesis of ultra-smooth conductive metal-organic framework thin films

TL;DR

This paper introduces an on-liquid-gallium surface synthesis method for creating ultra-smooth, conductive 2D MOF thin films with significantly reduced surface roughness, enabling improved electronic device performance and heterostructure applications.

Contribution

The study develops a novel CVD-based synthesis strategy on liquid gallium that produces ultra-smooth 2D MOF films with controlled growth, broad applicability, and enhanced electrical and optoelectronic properties.

Findings

Surface roughness reduced to ~2 Å

Contact resistance decreased by over ten orders of magnitude

Enhanced photoluminescence and work function modulation in heterostructures

Abstract

Conductive metal-organic frameworks (MOFs) are emerging electroactive materials for (opto-)electronics. However, it remains a great challenge to achieve reliable MOF-based devices via the existing synthesis methods that are compatible with the complementary metal-oxide-semiconductor technology, as the surface roughness of thus-far synthetic MOF films or pellets is rather high for efficient electrode contact. Here, we develop an on-liquid-gallium surface synthesis (OLGSS) strategy under chemical vapor deposition (CVD) conditions for the controlled growth of two-dimensional conjugated MOF (2D c-MOF) thin films with ten-fold improvement of surface flatness (surface roughness can reach as low as ~2 {\AA}) compared with MOF films grown by the traditional methods. Supported by theoretical modeling, we unveil a layer-by-layer CVD growth mode for constructing flattening surfaces, that is triggered by the high adhesion energy between gallium (Ga) and planar aromatic ligands. We further demonstrate the generality of the as-proposed OLGSS strategy by reproducing such a flat surface over nine different 2D c-MOF films with variable thicknesses (~2 to 208 nm) and large lateral sizes (over 1 cm2). The resultant ultra-smooth 2D c-MOF films enable the formation of high-quality electrical contacts with gold (Au) electrodes, leading to a reduction of contact resistance by over ten orders of magnitude compared to the traditional uneven MOF films. Furthermore, due to the efficient interfacial interaction benifited from the high-quality contacts, the prepared van der Waals heterostructure (vdWH) of OLGSS c-MOF and MoS2 exhibits intriguing photoluminescence (PL) enhancement, PL peak shift and large work function modulation. The establishment of the reliable OLGSS method provides the chances to push the development of MOF electronics and the construction of multicomponent MOF-based heterostructure materials.