Nucleation mechanism of multiple-order parameter ferroelectric domain wall motion in hafnia
Songsong Zhou, Andrew M. Rappe

TL;DR
This paper investigates the nucleation mechanisms of ferroelectric domain walls in hafnia, revealing how different domain wall types influence switching difficulty and proposing control strategies for improved device performance.
Contribution
It advances understanding of multi-order parameter domain wall nucleation in hafnia and suggests controlling domain wall populations to facilitate easier polarization switching.
Findings
Complex domain walls involve polarization and tetragonality reversal, leading to low energy but stable, hard-to-move walls.
Simple polarization-only domain walls have higher energy but are easier to nucleate and move.
Controlling domain wall types can enable faster switching and lower coercive fields in hafnia-based devices.
Abstract
Ferroelectric hafnia exhibits promising robust polarization and silicon compatibility for ferroelectric devices. Unfortunately, it suffers from difficult polarization switching. Methods to enable easier polarization switching are needed, and the underlying reason for this switching difficulty is not understood. Here, we investigated the 180 domain walls of hafnia and their motion through nucleation. We found that the domains of multiple-order parameter hafnia possess complicated three-dimensional dipole patterns and lead to domain walls of different symmetry. The most common domain wall type is a complex domain wall involving reversal of both polarization and tetragonality order parameters. This domain wall symmetry ensures a good matching of the dipoles perpendicular to the domain wall, which leads to low domain wall energy. However, this ensures a sharp, high energy, charged…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsFerroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Semiconductor materials and interfaces
