Pressure-Gated Microfluidic Memristor for Pulsatile Information Processing

TL;DR

This paper introduces a pressure-gated microfluidic memristor that utilizes both voltage and pressure to modulate ion transport, enabling enhanced and resettable information processing capabilities in microfluidic devices.

Contribution

It demonstrates how pressure can control and enhance the memristive properties of a microfluidic channel, enabling dual time series processing and improved information transfer.

Findings

Pressure can modulate memristive behavior in the channel.

Applying pressure pulses enhances conductance responses.

Bandwidth of information transfer can be doubled with pressure signals.

Abstract

A hitherto unexploited characteristic feature of emerging iontronic devices for information processing is the intrinsic mobility of the medium (water) of dissolved ions in aqueous electrolytes, which therefore not only respond to voltage but also to pressure. Here we study a microfluidic memristor, in the form of a conical channel, exposed to simultaneously applied time-dependent voltage and pressure drops, through numerical solutions of the Poisson-Nernst-Planck-Stokes equations for ion and fluid transport. We show that the channel's memristive properties can be enhanced, reduced or instantaneously reset by a suitable pressure, and we leverage this finding with two examples of time series processing of simultaneously applied voltage and pressure pulses. We not only show that the distinction between different voltage time series can be improved by enhancing the conductance response with corresponding pressure pulses, but also that the bandwidth of information transfer through the channel can be doubled by letting the pressure pulses represent a second independent time series.