Extreme Elastic Deformation of Atoms and Pressure-Induced Superconductivity in Silicon
Xiaozhi Hu

TL;DR
This paper models atomic elastic deformation under extreme pressure in silicon, predicting high elastic strains and linking atomic-scale changes to the emergence of pressure-induced superconductivity, validated by diamond experiments.
Contribution
It introduces a new mechanics model for atomic deformation under extreme pressure, predicting unprecedented elastic strains and the potential for superconductivity in silicon.
Findings
Critical elastic strain of silicon atoms estimated at 10-20%
Severely deformed silicon atoms exhibit new properties under high pressure
Pressure-induced superconductivity potential identified in silicon
Abstract
Change in the interatomic spacing of a two-atom system under tension and compression has been modelled by the elastic deformation of atoms. The critical elastic strain of atoms before separation or cracking from tension was estimated by the Griffith theory together with a recent mechanics model, then extended to the lateral elastic expansion under uniaxial compression. The hypothesis of deformable atoms has led to astonishing predictions of the critical elastic strain, around 10 and 20 percent for silicon in the 110 and 100 crystal directions. Superimposed by the substantial reduction of interatomic spacing in the direction of uniaxial compression above 20 GPa, these severely deformed silicon atoms or metastable new variants have acquired unforeseeable characteristics and properties, vastly different from those of silicon atoms under moderate stresses. Under extreme pressure, the…
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Taxonomy
TopicsBoron and Carbon Nanomaterials Research · Diamond and Carbon-based Materials Research · Advanced ceramic materials synthesis
