Circular Photocurrents in Centrosymmetric Semiconductors with Hidden Spin Polarization

TL;DR

This paper demonstrates the generation of spin-polarized circular photocurrents in centrosymmetric semiconductors with hidden spin polarization by using spatially-varying circularly polarized light, enabling potential spintronic applications.

Contribution

It introduces a method to generate and detect spin-polarized photocurrents in centrosymmetric materials without external bias, leveraging spatially inhomogeneous light and the inverse spin Hall effect.

Findings

Circular photocurrents depend on electrode configuration and illumination parameters.

Spin polarization and inverse spin Hall effect are probed under various wavelengths and temperatures.

Centrosymmetric materials with hidden spin polarization can be used for spintronic devices.

Abstract

Centrosymmetric materials with site inversion asymmetries possess hidden spin polarization, which remains challenging to be converted into spin currents because the global inversion symmetry is still conserved. This study demonstrates the spin-polarized DC circular photocurrents (CPC) in centrosymmetric transition metal dichalcogenides (TMDCs) at normal incidence without applying electric bias. The global inversion symmetry is broken by using a spatially-varying circularly polarized light beam, which could generate spin gradient owing to the hidden spin polarization. The dependences of the CPC on electrode configuration, illumination position, and beam spot size indicate an emergence of circulating electric current under spatially inhomogeneous light, which is associated with the deflection of spin-polarized current through the inverse spin Hall effect (ISHE). The CPC is subsequently utilized to probe the spin polarization and ISHE under different excitation wavelengths and temperatures. The results of this study demonstrate the feasibility of using centrosymmetric materials with hidden spin polarization and non-vanishing Berry curvature for spintronic device applications.