Towards scalable cryogenic quantum dot biasing using memristor-based DC sources
Pierre-Antoine Mouny, Rapha\"el Dawant, Patrick Dufour, Matthieu, Valdenaire, Serge Ecoffey, Michel Pioro-Ladri\`ere, Yann Beillard and, Dominique Drouin

TL;DR
This paper demonstrates the potential of memristor-based DC sources for cryogenic quantum dot biasing, showing experimental validation at 1.2K and proposing scalable CMOS-integrated solutions for large-scale quantum computing.
Contribution
It presents experimental validation of memristor-based DC sources at cryogenic temperatures and proposes a scalable CMOS-integrated approach for large-scale quantum dot biasing.
Findings
Successful operation of a cryogenic memristor-based DC source at 1.2K
Demonstrated tunability and low drift of the DC source prototype
Simulations indicate potential for monolithic integration of up to one million sources
Abstract
Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential for such DC sources. We first demonstrate the operation of a commercial discrete operational amplifier down to 1.2K which is used on the DC source prototype. Then, the tunability of the memristor-based DC source is validated by performing several 250mV-DC sweeps with a resolution of 10mV at room temperature and at 1.2K. Additionally, the DC source prototype exhibits a limited output drift of at 1.2K. This showcases the potential of memristor-based DC sources for quantum dot biasing. Limitations in power consumption and voltage resolution using discrete components highlight the need for a fully integrated and scalable complementary metal-oxide-semiconductor-based…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Quantum and electron transport phenomena · Semiconductor materials and devices
