Telecom wavelength single-photon emission from quasi-resonantly excited InGaSb/AlGaSb quantum dots
Teemu Hakkarainen, Joonas Hilska, Arttu Hietalahti, Sanna Ranta, Markus Peil, Robert Matysiak, Emmi Kantola, Abhiroop Chellu, Efsane Sen, Jussi-Pekka Penttinen, Anna Musia{\L}, Micha{\L} Gawe{\L}Czyk, Mircea Guina

TL;DR
This paper demonstrates telecom-wavelength single-photon emission from InGaSb quantum dots, employing resonant excitation techniques to access excitonic fine structure, advancing quantum communication technologies.
Contribution
It introduces a novel method for resonant excitation of InGaSb quantum dots, enabling access to excitonic fine structure at telecom wavelengths.
Findings
Achieved single-photon emission at 1500 nm from InGaSb quantum dots.
Demonstrated excitonic fine structure with a 24.1 μeV splitting.
Reported a multi-photon probability of 5% from charged excitons.
Abstract
Deterministic light sources capable of generating quantum states on-demand at wavelengths compatible with fiber optics and atmospheric transmission windows are essential for practical applications in quantum communication, distributed photonic quantum computing, and quantum metrology. Currently, the technology providing semiconductor quantum emitters with the most promising properties is based on filling droplet-etched nanoholes to form quantum dots (QDs). However, the standard GaAs/AlGaAs material system does not offer telecom window emission. Here, we combine this growth method with antimonide-based materials to demonstrate single-photon emission at 1500 nm from a droplet-etched InGaSb QD. Our device with an antimony-based high refractive index contrast back-reflector designed for cryogenic operation and a solid immersion lens improves photon extraction. QD states are protected by a…
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