Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor

TL;DR

This paper demonstrates a monolithically integrated GaN microLED and FET device that offers efficient, fast switching for next-generation microLED displays and communication systems.

Contribution

It introduces a novel GaN micro-light emitting transistor combining tunneling microLED with a GaN FET, enabling voltage-controlled output and simplified system design.

Findings

Excellent gate and drain current control

Optical emission is effectively controlled

Pathway for high-efficiency microLED integration

Abstract

GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an opportunity to control microLED output power with capacitive (voltage) control rather than current controlled schemes. This approach can greatly reduce system complexity for the driver circuit arrays while maintaining device opto-electronic performance. In this work, we demonstrate a 3-terminal GaN micro-light emitting transistor that combines a GaN/InGaN blue tunneling-based microLED with a GaN n-channel FET. The integrated device exhibits excellent gate control, drain current control and optical emission control. This work provides a promising pathway for future monolithic integration of GaN FETs with microLED to enable fast switching high efficiency microLED display and communication systems.