Orbital Hall Responses in Disordered Topological Materials

TL;DR

This paper introduces a numerical method to efficiently compute orbital Hall responses in disordered topological materials using Berry phase theory, enabling realistic simulations of complex disordered systems.

Contribution

The authors develop a Chebyshev expansion-based numerical approach to calculate orbital Hall responses in disordered topological materials, improving simulation realism.

Findings

Successfully computed orbital Hall conductivity in gapped graphene

Analyzed effects of nonperturbative disorder in the Haldane model

Demonstrated the method's applicability to complex disordered systems

Abstract

We report an efficient numerical approach to compute the different components of the orbital Hall responses in disordered topological materials from the Berry phase theory of magnetization. The theoretical framework is based on the Chebyshev expansion of Green's functions and the off-diagonal elements of the position operator for systems under arbitrary boundary conditions. The capability of this scheme is shown by computing the orbital Hall conductivity for gapped graphene and the Haldane model in the presence of nonperturbative disorder effects. This methodology enables realistic simulations of orbital Hall responses in highly complex models of disordered materials.