Rashba spin splitting-induced topological Hall effect in a Dirac semimetal-ferromagnetic semiconductor heterostructure
Saurav Islam, Emma Steinebronn, Kaijie Yang, Bimal Neupane, Juan, Chamorro, Supriya Ghosh, K. Andre Mkhoyan, Tyrel M. McQueen, Yuanxi Wang,, Chaoxing Liu, and Nitin Samarth

TL;DR
This study combines theory and experiments to demonstrate how Rashba spin-orbit coupling at a Dirac semimetal-ferromagnetic interface induces chiral spin textures, leading to a topological Hall effect that can be tuned via gate voltage.
Contribution
It reveals the emergence of a topological Hall effect driven by Rashba-induced chiral spin textures at a Dirac semimetal/ferromagnet interface, with electrostatic tunability.
Findings
Observation of an excess transverse magneto-resistance consistent with topological Hall effect.
Evidence of Rashba spin-orbit coupling inducing Dzyaloshinskii-Moriya interactions.
Gate voltage dependence demonstrates electrostatic control over spin textures.
Abstract
We use a concerted theory-experiment effort to investigate the formation of chiral real space spin texture when the archetypal Dirac semimetal CdAs is interfaced with InMnAs, a ferromagnetic semiconductor with perpendicular magnetic anisotropy. Our calculations reveal a nonzero off-diagonal spin susceptibility in the CdAs layer due to the Rashba spin-orbit coupling from broken inversion symmetry. This implies the presence of a Dzyaloshinskii-Moriya interaction between local moments in the InMnAs layer, mediated by Dirac electrons in the vicinal CdAs layer, potentially creating the conditions for a real space chiral spin texture. Using electrical magnetoresistance measurements at low temperature, we observe an emergent excess contribution to the transverse magneto-resistance whose behavior is consistent with a topological Hall effect…
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Taxonomy
TopicsTopological Materials and Phenomena · Graphene research and applications · Quantum and electron transport phenomena
