Electrical readout of spins in the absence of spin blockade
Felix-Ekkehard von Horstig, Lorenzo Peri, Virginia N. Ciriano-Tejel, Sylvain Barraud, Jason A. W. Robinson, Monica Benito, Frederico Martins, M. Fernando Gonzalez-Zalba

TL;DR
This paper introduces a novel electrical spin readout method that functions effectively even when spin blockade is lifted by mechanisms like spin-orbit coupling, demonstrated on a silicon quantum dot system.
Contribution
The authors develop a new spin readout technique based on polarizability dependence on energy detuning, enabling high-fidelity measurements despite spin blockade lifting mechanisms.
Findings
Successfully demonstrated spin-selective readout in a silicon quantum dot system.
Determined spin relaxation times ranging from 0.1 to 8 microseconds.
Showed the method's robustness against spin blockade lifting mechanisms.
Abstract
In semiconductor nanostructures, spin blockade (SB) is the most scalable mechanism for electrical spin readout, requiring only two bound spins for its implementation. In conjunction with charge sensing techniques, SB has led to high-fidelity readout of spins in semiconductor-based quantum processors. However, various mechanisms may lift SB, such as strong spin-orbit coupling (SOC) or low-lying excited states, hence posing challenges to perform spin readout at scale and with high fidelity in such systems. Here, we present a method, based on the dependence of the two-spin system polarizability on energy detuning, to perform spin state readout even when SB lifting mechanisms are dominant. It leverages SB lifting as a resource to detect selectively different spin measurement outcomes. We demonstrate the method using a hybrid system formed by a quantum dot (QD) and a Boron acceptor in a…
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Taxonomy
TopicsAdvanced MRI Techniques and Applications · Advanced Memory and Neural Computing
