1/f frequency fluctuations due to kinetic inductance in CoSi$_2$ microwave cavities
Weijun Zeng, Ilari Lilja, Ekaterina Mukhanova, Elica Heredia, Chun-Wei, Wu, Juhn-Jong Lin, Sheng-Shiuan Yeh, Pertti Hakonen

TL;DR
This study investigates 1/f frequency fluctuations in CoSi$_2$ superconducting microwave cavities, attributing the noise to kinetic inductance fluctuations and analyzing their dependence on temperature and power.
Contribution
It provides the first characterization of frequency noise in CoSi$_2$ microwave cavities and links the fluctuations to kinetic inductance variations.
Findings
Frequency fluctuations follow a 1/f spectral density.
Noise decreases with measurement power as 1/√P.
Fluctuations are attributed to kinetic inductance variations.
Abstract
Cobalt disilicide provides a promising nearly-epitaxial superconducting material on silicon, which is compatible with high-density integrated circuit technology. We have characterized CoSi superconducting microwave cavities around 5.5 GHz for resonance frequency fluctuations at temperatures 10 - 200 mK. We found relatively weak fluctuations following the spectral density , with and slightly below 1 at an average number of photons of ; the noise decreased with measurement power as . We identify the noise as arising from kinetic inductance fluctuations and discuss possible origins of such fluctuations.
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Taxonomy
TopicsAcoustic Wave Resonator Technologies · Semiconductor materials and interfaces · Semiconductor Quantum Structures and Devices
