Quantum communication networks with defects in silicon carbide

TL;DR

This paper reviews silicon carbide defects as promising quantum nodes for scalable quantum communication networks, highlighting their optical properties, potential for integration, and modeling protocols to surpass direct links.

Contribution

It provides an overview of SiC defects, models quantum communication protocols with them, and outlines steps for deploying SiC-based quantum networks.

Findings

Identification of SiC defects with telecom-range optical transitions

Modeling of memory-enhanced quantum communication protocols

Key steps outlined for large-scale SiC quantum network deployment

Abstract

Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations due to photon loss. Silicon carbide (SiC) defects have emerged as a promising quantum device platform, offering strong optical transitions, long spin coherence lifetimes and the opportunity for integration with semiconductor devices. Some defects with optical transitions in the telecom range have been identified, allowing to interface with fiber networks without the need for wavelength conversion. These unique properties make SiC an attractive platform for the implementation of quantum nodes for quantum communication networks. We provide an overview of the most prominent defects in SiC and their implementation in spin-photon interfaces. Furthermore, we model an exemplary, memory-enhanced quantum communication protocol in order to extract the parameters required to surpass a direct point-to-point link performance. Based on these insights, we summarize the key steps required towards the deployment of SiC devices in large-scale quantum communication networks.