Large spin shuttling oscillations enabling high-fidelity single qubit gates

TL;DR

This paper demonstrates that using spin shuttling in semiconductor quantum dots can significantly improve single-qubit gate fidelity by leveraging larger Rabi frequencies and noise reduction, outperforming static methods.

Contribution

It introduces a novel approach of spin shuttling to enhance single-qubit gate performance, surpassing static EDSR techniques and addressing spin-valley physics limitations.

Findings

Shuttling-based gates achieve higher Rabi frequencies.

Fidelities can be improved with quantum optimal control.

Spin-valley physics is a key fidelity bottleneck.

Abstract

Semiconductor quantum dots have shown impressive breakthroughs in the last years, with single and two qubit gate fidelities matching other leading platforms and scalability still remaining a relative strength. However, due to qubit wiring considerations, mobile electron architectures have been proposed to facilitate upward scaling. In this work, we examine and demonstrate the possibility of significantly outperforming static EDSR-type single-qubit pulsing by taking advantage of the larger spatial mobility to achieve larger Rabi frequencies and reduce the effect of charge noise. Our theoretical results indicate that fidelities are ultimately bottlenecked by spin-valley physics, which can be suppressed through the use of quantum optimal control, and we demonstrate that, across different potential regimes and competing physical models, shuttling based single-qubit gates retain significant advantage over existing alternatives.