Enhancement of the Environmental Stability of Perovskite Thin Films via PMMA and AZ5214-Photoresist Coatings

TL;DR

This study presents a novel encapsulation method using PMMA and AZ5214 photoresist layers to significantly improve the environmental stability of perovskite thin films, extending their lifespan under ambient conditions for optoelectronic applications.

Contribution

The paper introduces a new encapsulation strategy with AZ5214 photoresist that outperforms PMMA in stabilizing perovskite films against environmental degradation.

Findings

AZ5214 photoresist provides superior stability compared to PMMA.

Perovskite films remain stable for up to 960 hours under environmental exposure.

Encapsulation effectively reduces moisture ingress and pinhole effects.

Abstract

We introduce a pioneering strategy to enhance the environmental stability of perovskite thin films, a critical step forward in advancing their application in optoelectronics. Through the innovative application of matrix encapsulation techniques, we focus on the stabilization of methylammonium lead iodide (MAPbI3) and methylammonium lead bromide (MAPbBr3) films. These films are meticulously prepared via a two-step solution deposition method under controlled ambient conditions. Our approach involves the application of poly(methyl methacrylate) (PMMA) and AZ5214 photoresist layers through spin-coating, aimed at singularly encapsulating the perovskite films. This encapsulation acts as a robust hydrophobic barrier, significantly mitigating moisture ingress and simultaneously addressing the challenge of pinhole presence within the perovskite structure. Through a series of detailed characterizations-spanning scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) spectroscopy-we demonstrate that, despite the thicker nature of the AZ5214 photoresist compared to the PMMA layer, it exhibits markedly enhanced stability. Notably, the integrity and optical properties of the perovskite films are preserved for extended periods of up to 960 hours under environmental exposure. This breakthrough highlights the superior performance of AZ5214 photoresist over PMMA in prolonging the operational life of perovskite thin films, thereby offering a promising avenue for their deployment in a wide range of optoelectronic devices.