Simulated Charge Stability in a MOSFET Linear Quantum Dot Array

TL;DR

This paper presents numerical methods to analyze charge stability in linear quantum dot arrays, aiding the development of scalable spin qubit quantum processors by modeling charge states and electrical cross-talk.

Contribution

It introduces a generalized approach using Hubbard model parameters to simulate charge stability diagrams in realistic quantum dot geometries.

Findings

Charge stability diagrams can be accurately modeled for double and linear QD arrays.

The methods identify gate voltage ranges for stable qubit operation.

Electrical cross-talk effects are effectively incorporated into the analysis.

Abstract

In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a realistic double QD device geometry. These methods generaize to linear QD arrays, and are based on determining the effective parameters of a Hubbard model Hamiltonian that is then diagonalized to find the many-electron ground state energy. These calculations enable the identification of gate voltage ranges that maintain desired charge states during qubit manipulation, and also account for electrical cross-talk between QDs. As a result, the methods presented here promise to be a valuable tool for developing scalable spin qubit quantum processors.