Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study
Max Bergmann, J\"urgen Belz, Oliver Ma{\ss}meyer, Badrosadat Ojaghi Dogahe, Robin G\"unkel, Johannes Glowatzki, Andreas Beyer, Ivan Solovev, Jens-Christian Drawer, Martin Esmann, Sergej Pasko, Simonas Krotkus, Michael Heuken, Stefan Wippermann, Kerstin Volz

TL;DR
This study combines nanometer-resolved EELS and DFT calculations to analyze how layer number and environment affect excitonic properties in epitaxial WS2 on graphene, providing insights for device applications.
Contribution
It introduces a combined experimental and theoretical approach to study excitons in multilayer WS2 heterostructures at nanometer resolution.
Findings
Redshift of excitonic peaks with increasing layer number
Identification of band nesting effects in higher energy features
Successful correlation of atomic structure with optical properties
Abstract
In this study, we investigate excitonic properties of epitaxially grown WS2, which is of particular interest for various applications due to its potential for upscaling to wafer sized structures. Understanding the effect of the dielectric environment due to changing layer numbers and multi-material heterostructures on the optical properties is crucial for tailoring device properties. Monochromated electron energy loss spectroscopy in a scanning transmission electron microscope is employed to characterize the excitonic spectrum of WS2 on graphene grown by metal organic chemical vapor deposition. This technique provides the required spatial resolution at the nanometer scale in combination with high quality spectra. To complement the experimental results, theoretical investigations using density functional theory and applying the Bethe-Salpeter equations are conducted. We find that by…
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Taxonomy
Topics2D Materials and Applications · Chalcogenide Semiconductor Thin Films · MXene and MAX Phase Materials
