Experimental investigation on the effect of temperature on the frequency limit of GaAs-AlGaAs and AlGaN-GaN 2DEG Hall-effect sensors
Anand V Lalwani, Abel John, Satish Shetty, Miriam Giparakis, Kanika, Arora, Avidesh Maharaj, Gottfried Strasser, Aaron Maxwell Andrews, Helmut, Koeck, Alan Mantooth, Gregory Salamo, and Debbie G Senesky
TL;DR
This study examines how temperature variations influence the frequency response limits of 2DEG Hall-effect sensors made from GaAs-AlGaAs and AlGaN-GaN materials, providing insights into their operational stability.
Contribution
It presents experimental data on the temperature dependence of frequency limits in 2DEG Hall-effect sensors, a topic not extensively explored before.
Findings
Temperature affects the frequency limit of 2DEG Hall sensors.
GaAs-AlGaAs and AlGaN-GaN sensors show different temperature sensitivities.
Results inform sensor design for high-temperature applications.
Abstract
This follow-on work investigates the effect of temperature on the frequency limit of 2-dimensional electron gas (2DEG) Hall-effect sensors.
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Taxonomy
TopicsMagnetic Field Sensors Techniques · Semiconductor Quantum Structures and Devices · Advanced MEMS and NEMS Technologies