Toward Mass-Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2 by Tungsten Selenization
Kathryn M. Neilson, Sarallah Hamtaei, Koosha Nassiri Nazif, Joshua M., Carr, Sepideh Rahimisheikh, Frederick U. Nitta, Guy Brammertz, Jeffrey L., Blackburn, Joke Hadermann, Krishna C. Saraswat, Obadiah G. Reid, Bart, Vermang, Alwin Daus, Eric Pop

TL;DR
This paper demonstrates a scalable method to produce high-quality multilayer WSe2 films for solar cells, achieving high carrier lifetimes and efficiencies, thus enabling mass production of TMD-based photovoltaics.
Contribution
It introduces a scalable, thickness-tunable synthesis process for multilayer WSe2 films with high carrier lifetimes, suitable for large-scale solar cell manufacturing.
Findings
Charge carrier lifetimes up to 144 ns achieved
Power conversion efficiency of ~22% in solar cells
High specific power of ~64 W g$^{-1}$ in modules
Abstract
Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to desirable band gaps, high absorption coefficients, and ideally dangling-bond-free surfaces. Despite their potential, the majority of TMD solar cells are fabricated in a non-scalable fashion using exfoliated materials due to the absence of high-quality, large-area, multilayer TMDs. Here, we present the scalable, thickness-tunable synthesis of multilayer tungsten diselenide (WSe) films by selenizing pre-patterned tungsten with either solid source selenium or HSe precursors, which leads to smooth, wafer-scale WSe films with a layered van der Waals structure. The films have charge carrier lifetimes up to 144 ns, over 14x higher than large-area TMD films previously demonstrated. Such high carrier lifetimes correspond to power conversion efficiency of ~22% and…
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · 2D Materials and Applications · Quantum Dots Synthesis And Properties
