Entropy-Assisted Nanosecond stochastic operation in perpendicular superparamagnetic tunnel junctions

TL;DR

This paper investigates the stochastic switching behavior of superparamagnetic tunnel junctions, revealing ultrafast dwell times and entropic effects that enable potential applications in low-power, high-speed unconventional computing.

Contribution

It provides experimental validation of theoretical models for dwell times in SMTJs, highlighting the role of entropy and anisotropy in achieving nanosecond switching times.

Findings

Mean dwell times as low as 2.7 ns measured

Arrhenius prefactors in femtoseconds due to entropy

Prediction of sub-nanosecond dwell times at small scales

Abstract

We demonstrate a good agreement between mean dwell times measured in 50~nm diameter, perpendicularly magnetized superparamagnetic tunnel junctions (SMTJ), and theoretical predictions based on Langer's theory. Due to a large entropic contribution, the theory yields Arrhenius prefactors in the femtosecond range for the measured junctions, in stark contrast to the typically assumed value of 1~ns. Thanks to the low prefactors, and fine-tuning of the perpendicular magnetic anisotropy, we report measured mean dwell times as low as 2.7~ns under an in-plane applied field at negligible bias voltage. Under a perpendicular applied field, we predict a Meyer-Neldel compensation phenomenon, whereby the prefactor scales like an exponential of the activation energy, in line with the exponential dependence of the measured dwell time on the field. We further predict the occurrence of (sub)nanosecond dwell times as a function of effective anisotropy and junction diameter at zero bias voltage. These findings pave the way towards the development of ultrafast, low-power, unconventional computing schemes operating by leveraging thermal noise in perpendicular SMTJs, which can be scaled down below 20~nm.