Electrical properties of highly-doped MBE-grown gallium phosphide nanowires

TL;DR

This study investigates the growth and electrical properties of highly-doped gallium phosphide nanowires grown by MBE, providing strategies to achieve high doping levels suitable for device applications.

Contribution

It presents new growth strategies and electrical characterization methods for highly-doped GaP nanowires, enabling their use in nanowire-based devices.

Findings

Achieved doping levels up to 5E18 and 2E19 cm^-3 for GaP:Si and GaP:Be nanowires.

Quantitative electrical conductivity measurements of individual nanowires.

Provided growth strategies for high doping levels in GaP nanowires.

Abstract

Efficient doping of semiconductor nanowires remains a major challenge towards the commercialization of nanowire-based devices. In this work we investigate the growth regimes and electrical properties of MBE-grown p- and n-type gallium phosphide nanowires doped with Be and Si respectively. Electrical conductivity of individual nanowires is quantitatively studied via atomic force microscopy supported with numerical analysis. Based on conductivity measurements, we provide growth strategies for achieving the doping level up to 5E18 and 2E19 $cm^{-3}$ for GaP:Si and GaP:Be nanowires respectively, which is high enough to be demanded for technological applications.