Whole Device Modeling of the FuZE Sheared-Flow-Stabilized Z Pinch

TL;DR

This paper presents a comprehensive simulation of the FuZE sheared-flow-stabilized Z pinch device, accurately modeling plasma behavior and fusion neutron production, providing insights and predictive capabilities for device design improvements.

Contribution

It introduces a whole-device resistive MHD simulation framework for the FuZE Z pinch, achieving close agreement with experimental data and enabling predictive analysis.

Findings

Simulated Z pinch densities around 10^22 m^-3

Fusion neutron rate of approximately 10^7 per microsecond

Simulation results closely match experimental current and voltage measurements

Abstract

The FuZE sheared-flow-stabilized Z pinch at Zap Energy is simulated using whole-device modeling employing an axisymmetric resistive magnetohydrodynamic formulation implemented within the discontinuous Galerkin WARPXM framework. Simulations show formation of Z pinches with densities of approximately 10^22 m^-3 and total DD fusion neutron rate of 10^7 per {\mu}s for approximately 2 {\mu}s. Simulation-derived synthetic diagnostics show peak currents and voltages within 10% and total yield within approximately 30% of experiment for similar plasma mass. The simulations provide insight into the plasma dynamics in the experiment and enable a predictive capability for exploring design changes on devices built at Zap Energy.