Silicon Optical Memory: Non-Volatile Optoelectronic Devices via Si-SiO$_2$ Hysteresis Effect

TL;DR

This paper demonstrates a novel silicon-based optical memory leveraging a hysteresis effect at the silicon-silicon oxide interface, enabling non-volatile, multi-level optical data storage compatible with standard silicon fabrication.

Contribution

It introduces a new silicon optical memory device based on a hysteresis effect, providing a simple, robust, and integrable solution for on-chip non-volatile optical data storage.

Findings

Achieved multi-level, non-volatile optical data storage

Demonstrated robust retention and endurance

Compatible with standard silicon foundry processes

Abstract

Implementing on-chip non-volatile optical memories has long been an actively pursued goal, promising significant enhancements in the capability and energy efficiency of photonic integrated circuits. Here, a novel optical memory has been demonstrated exclusively using the semiconductor primary material, silicon. By manipulating the optoelectronic effect of this device, we introduce a hysteresis effect at the silicon-silicon oxide interface, which in turn demonstrates multi-level, non-volatile optical data storage with robust retention and endurance. This new silicon optical memory provides a distinctively simple and accessible route to realize optical data storage in standard silicon foundry processes.