Gated InAs quantum dots embedded in surface acoustic wave cavities for low-noise optomechanics

TL;DR

This paper demonstrates the integration of gated InAs quantum dots with surface acoustic wave cavities, enabling low-noise optomechanical systems crucial for microwave-to-optical quantum transduction.

Contribution

It introduces a novel fabrication approach for combining gated quantum dots with SAW cavities, maintaining high performance for quantum optomechanics.

Findings

Successful integration of gated QDs and SAW cavities.

Retention of quantum dot photonic properties post-integration.

Potential for low-noise quantum transduction applications.

Abstract

Self-assembled InAs quantum dots (QDs) are promising optomechanical elements due to their excellent photonic properties and sensitivity to local strain fields. Microwave-frequency modulation of photons scattered from these efficient quantum emitters has been recently demonstrated using surface acoustic wave (SAW) cavities. However, for optimal performance, a gate structure is required to deterministically control the charge state and reduce charge noise of the QDs. Here, we integrate gated QDs and SAW cavities using molecular beam epitaxy and nanofabrication. We demonstrate that with careful design of the substrate layer structure, integration of the two systems can be accomplished while retaining the optimal performance of each subsystem. These results mark a critical step toward efficient and low-noise optomechanical systems for microwave-to-optical quantum transduction.