Position operators and interband matrix elements of scalar and vector potentials in the 8-band Kane model
I. A. Ado, M. Titov, Rembert A. Duine, Arne Brataas

TL;DR
This paper refines the 8-band Kane model by accurately including interband matrix elements, revealing significant corrections to spin-orbit coupling estimates and clarifying the velocity operator's proper definition in narrow-gap semiconductors.
Contribution
It introduces a proper diagonalization of the Kane Hamiltonian with interband matrix elements, correcting the SOC strength and velocity operator definitions, impacting previous Rashba model applications.
Findings
SOC strength in GaAs is twice the conventional estimate at low temperatures.
In InSb, the SOC strength is 1.76 times larger than previously thought.
The ratio between the velocity operator's SOC strength and the Hamiltonian's is a rational function between 1.49 and 2.
Abstract
We diagonalize the 8-band Kane Hamiltonian with a proper inclusion of the interband matrix elements of the scalar and vector potentials. This leads, among other results, to a modification of the conventional expression for the spin-orbit coupling (SOC) strength in narrow-gap semiconductors with the zinc blende symmetry. We find that in GaAs, at low temperatures, the correct expression for the SOC strength is actually twice as large as usually considered. In InSb it is times larger. We also provide a proper treatment of the interband matrix elements of the position operator. We show that the velocity operator in a crystal should be defined as a time-derivative of a fictitious position operator rather than the physical one. We compute the expressions for both these position operators projected to the conduction band of the 8-band Kane model. We also derive an expression for the…
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Taxonomy
TopicsCold Atom Physics and Bose-Einstein Condensates · Nonlinear Photonic Systems · Quantum Mechanics and Non-Hermitian Physics
