Universality of Quantum Phase Transitions in the Integer and Fractional Quantum Hall Regimes
Simrandeep Kaur, Tanima Chanda, Kazi Rafsanjani Amin, Divya Sahani,, Kenji Watanabe, Takashi Taniguchi, Unmesh Ghorai, Yuval Gefen, G. J. Sreejith, and Aveek Bid

TL;DR
This study uncovers a universal critical behavior in both integer and fractional quantum Hall transitions, revealing identical scaling exponents across different regimes in ultra-high mobility graphene devices, challenging previous disorder-dependent variability.
Contribution
The paper demonstrates super-universality of quantum Hall transition critical exponents, showing they are consistent across integer and fractional regimes in short-range disorder conditions, using advanced graphene samples.
Findings
Same critical exponent $oxed{oxed{ ext{0.41} ext{±} ext{0.02}}}$ for all transitions.
Localization length exponent $oxed{oxed{ ext{2.4} ext{±} ext{0.2}}}$ consistent across regimes.
Dynamical exponent $z oxed{oxed{ ext{≈ 1}}}$ derived from scaling analysis.
Abstract
Fractional quantum Hall (FQH) phases emerge due to strong electronic interactions and are characterized by anyonic quasiparticles, each distinguished by unique topological parameters, fractional charge, and statistics. In contrast, the integer quantum Hall (IQH) effects can be understood from the band topology of non-interacting electrons. We report a surprising super-universality of the critical behavior across all FQH and IQH transitions. Contrary to the anticipated state-dependent critical exponents, our findings reveal the same critical scaling exponent and localization length exponent for fractional and integer quantum Hall transitions. From these, we extract the value of the dynamical exponent . We have achieved this in ultra-high mobility trilayer graphene devices with a metallic screening layer close to the conduction…
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Taxonomy
TopicsQuantum and electron transport phenomena · Graphene research and applications · Surface and Thin Film Phenomena
