AlGaN/AlN heterostructures: an emerging platform for nonlinear integrated photonics
Sinan G\"undogdu, Sofia Pazzagli, Tommaso Pregnolato, Tim Kolbe,, Sylvia Hagedorn, Markus Weyers, Tim Schr\"oder

TL;DR
This paper introduces AlGaN/AlN heterostructures as a new integrated photonics platform combining nonlinear optical capabilities, compatibility with existing fabrication processes, and broad spectral transmission for advanced quantum and classical photonic applications.
Contribution
The work presents the design, growth, and integration of AlGaN/AlN heterostructures with fundamental photonic components, enabling nonlinear and quantum functionalities on-chip.
Findings
Successful fabrication of low-loss waveguides and high-Q resonators
Demonstration of nonlinear light-matter interactions
Potential for quantum frequency conversion and fast modulation
Abstract
In the rapidly evolving area of integrated photonics, there is a growing need for materials that satisfy the particular requirements of increasingly complex and specialized devices and applications. Present photonic material platforms have made significant progress over the past years; however, each platform still faces specific material and performance challenges. We introduce a novel material for integrated photonics: Aluminum Gallium Nitride (AlGaN) on Aluminum Nitride (AlN) as a platform for developing reconfigurable and nonlinear on-chip optical systems. AlGaN combines compatibility with standard semiconductor fabrication technologies, high electro-optic modulation capabilities, and large nonlinear coefficients while providing a broad and low-loss spectral transmission range, making it a viable material for advanced photonic applications. In this work, we design and grow AlGaN/AlN…
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Taxonomy
TopicsPhotonic and Optical Devices · Advanced Fiber Laser Technologies · GaN-based semiconductor devices and materials
