Hybrid III-V/Silicon Quantum Photonic Device Generating Broadband Entangled Photon Pairs
J. Schuhmann, L. Lazzari, M. Morassi, A. Lemaitre, I. Sagnes, G. Beaudoin, M.I. Amanti, F. Boeuf, F. Raineri, F. Baboux, S. Ducci

TL;DR
This paper presents a hybrid III-V/Silicon quantum photonic device capable of generating broadband entangled photon pairs at room temperature, combining nonlinear and CMOS-compatible platforms for scalable quantum information applications.
Contribution
The work demonstrates a novel hybrid photonic device integrating III-V and silicon platforms to produce broadband entangled photons with high efficiency and quality, advancing integrated quantum photonics.
Findings
Broadband (>40 nm) telecom photon pairs generated on-chip.
High pair generation rate exceeding 10^5 s^{-1}.
Two-photon interference visibility up to 92%.
Abstract
The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic circuits with diverse functionalities are being developed in different single material platforms, it has become crucial to realize hybrid photonic circuits that harness the advantages of multiple materials while mitigating their respective weaknesses, resulting in enhanced capabilities. Here, we demonstrate a hybrid III-V/Silicon quantum photonic device combining the strong second-order nonlinearity and direct bandgap of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an AlGaAs source and their…
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Taxonomy
TopicsPhotonic and Optical Devices · Neural Networks and Reservoir Computing · Optical Network Technologies
