Low voltage local strain enhanced switching of magnetic tunnel junctions

TL;DR

This paper demonstrates that applying low-voltage electric fields can significantly enhance the magnetic switching behavior of nanoscale magnetic tunnel junctions through strain engineering, enabling more energy-efficient control.

Contribution

The study introduces a method to control magnetic switching in MTJs using low-voltage electric fields via local strain, achieving record-low voltage control and linear enhancement of tunnel magnetoresistance.

Findings

Record-low voltage (200 mV) control of switching field.

Linear enhancement of tunnel magnetoresistance with voltage.

Strain improves magnetic anisotropy and device performance.

Abstract

Strain-controlled modulation of the magnetic switching behavior in magnetic tunnel junctions (MTJs) could provide the energy efficiency needed to accelerate the use of MTJs in memory, logic, and neuromorphic computing, as well as an additional way to tune MTJ properties for these applications. State-of-the-art CoFeB-MgO based MTJs still require too high voltages to alter their magnetic switching behavior with strain. In this study, we demonstrate strain-enhanced field switching of nanoscale MTJs through electric field control via voltage applied across local gates. The results show that record-low voltage down to 200 mV can be used to control the switching field of the MTJ through enhancing the magnetic anisotropy, and that tunnel magnetoresistance is linearly enhanced with voltage through straining the crystal structure of the tunnel barrier. These findings underscore the potential of electric field manipulation and strain engineering as effective strategies for tailoring the properties and functionality of nanoscale MTJs.