Mid infrared near-field fingerprint spectroscopy of the 2D electron gas in LaAlO$_3$/SrTiO$_3$ at low temperatures
Julian Barnett, Konstantin G. Wirth, Richard Hentrich, Yasin C., Durmaz, Marc-Andr\'e Rose, Felix Gunkel, Thomas Taubner

TL;DR
This study introduces a novel mid-infrared near-field spectroscopy method to analyze the local electronic properties of 2D electron gases in LaAlO$_3$/SrTiO$_3$, enabling nanoscale inhomogeneity characterization at low temperatures.
Contribution
We predict and experimentally verify a unique s-SNOM fingerprint response for 2DEGs, allowing separation of carrier concentration and mobility effects at nanoscale.
Findings
Identified a unique spectral fingerprint of 2DEG in LaAlO$_3$/SrTiO$_3$
Demonstrated separation of carrier concentration and mobility influences
Enabled nanoscale mapping of electronic inhomogeneities
Abstract
Confined electron systems, such as 2D electron gases (2DEGs), 2D materials, or topological insulators show great technological promise but their susceptibility to defects often results in nanoscale inhomogeneities with unclear origins. Scattering-type scanning near-field optical microscopy (s-SNOM) is useful to investigate buried confined electron systems non-destructively with nanoscale resolution, however, a clear separation of carrier concentration and mobility was often impossible in s-SNOM. Here, we predict a previously inaccessible characteristic "fingerprint" response of the prototypical LaAlO/SrTiO 2DEG, and verify this using a state-of-the-art tunable narrow-band laser in mid-infrared cryo-s-SNOM at 8 K. Our modelling allows us to separate the influence of carrier concentration and mobility on fingerprint spectra and to characterize 2DEG inhomogeneities on the…
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Semiconductor Quantum Structures and Devices · Semiconductor materials and devices
