Field-Effect Transistors based on 2-D Materials: a Modeling Perspective

TL;DR

This paper presents an ab initio modeling approach for 2D material-based FETs, aiding in predicting device performance and guiding experimental design for next-generation nanoelectronics.

Contribution

It introduces a comprehensive modeling framework for 2D FETs, including contact physics and scattering effects, advancing the simulation tools for 2D device development.

Findings

Modeling of thermionic and tunneling transistors based on 2D materials.

Insights into metal-2D semiconductor contact physics.

Analysis of scattering sources affecting 2D material mobility.

Abstract

Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as its Silicon counterpart, device simulation can be of great help to predict the ultimate performance of 2D FETs and provide experimentalists with reliable design guidelines. In this paper, an ab initio modelling approach dedicated to well-known and exotic 2D materials is presented and applied to the simulation of various components, from thermionic to tunnelling transistors based on mono- and multi-layer channels. Moreover, the physics of metal - 2D semiconductor contacts is revealed and the importance of different scattering sources on the mobility of selected 2D materials is discussed. It is expected that modeling frameworks similar to the one described here will not only accompany future developments of 2D devices, but will also enable them.