Spectral stability of V2 centres in sub-micron 4H-SiC membranes
Jonah Heiler, Jonathan K\"orber, Erik Hesselmeier, Pierre Kuna, Rainer, St\"ohr, Philipp Fuchs, Misagh Ghezellou, Jawad Ul-Hassan, Wolfgang Knolle,, Christoph Becher, Florian Kaiser, J\"org Wrachtrup

TL;DR
This study demonstrates that silicon vacancy centres in ultra-thin silicon carbide membranes maintain high spectral stability and narrow optical linewidths, enabling their integration into nanophotonic structures for quantum technologies.
Contribution
We systematically investigate the spectral stability of V2 centres in sub-micron 4H-SiC membranes, showing their suitability for nanophotonic integration in quantum applications.
Findings
Spectral wandering increases in membranes thinner than 0.7 μm.
Optical linewidths remain below 200 MHz in membranes down to 0.25 μm.
Membranes exhibit low surface roughness and negligible fluorescence.
Abstract
Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced spectral stabilities. Here, we provide a large-scale systematic investigation on silicon vacancy centres in thin silicon carbide membranes with thicknesses down to . Our membrane fabrication process involves a combination of chemical mechanical polishing, reactive ion etching, and subsequent annealing. This leads to highly reproducible membranes with roughness values of , as well as negligible surface fluorescence. We find that silicon vacancy centres show close-to lifetime limited optical linewidths with almost no signs of spectral wandering down to membrane thicknesses…
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Taxonomy
TopicsDiamond and Carbon-based Materials Research · Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices
