Room-temperature waveguide-coupled silicon single-photon avalanche diodes

TL;DR

This paper introduces the first waveguide-coupled silicon single-photon avalanche diode operating at room temperature in the visible spectrum, enabling integrated quantum photonic applications.

Contribution

It presents a monolithically integrated silicon SPAD in a photonic platform, demonstrating room-temperature operation and specific efficiency and dark count metrics.

Findings

Single photon detection efficiency > 6% at 488 nm and 532 nm

Dark count rate below 100 kHz at room temperature

Potential 35% reduction in dark counts by cooling to -5°C

Abstract

Single photon detection is important for a wide range of low-light applications, including quantum information processing, spectroscopy, and light detection and ranging (LiDAR). A key challenge in these applications has been to integrate single-photon detection capability into photonic circuits for the realization of complex photonic microsystems. Short-wavelength ($\lambda$ < 1.1 $\mu$m) integrated photonics platforms that use silicon (Si) as photodetectors offer the opportunity to achieve single-photon avalanche diodes (SPADs) that operate at or near room temperature. Here, we report the first waveguide-coupled Si SPAD. The device is monolithically integrated in a Si photonic platform and operates in the visible spectrum. The device exhibited a single photon detection efficiency of > 6% for wavelengths of 488 nm and 532 nm with an excess voltage less than 20% of the breakdown voltage. The dark count rate was below 100 kHz at room temperature, with the possibility of improving by approximately 35% by reducing the temperature to -5$^{\circ}$C.